Student: Sarah Blythe
Committee: Dr. Terry Alford
Abstract:
Metal-semiconductor contacts are an important component of many semiconductor devices. A metal-semiconductor contact is a component in which metal is directly in contact with a semiconductor. The two key types of metal-semiconductor contacts are Ohmic and Schottky contacts. In a transistor, an Ohmic contact makes up the source and drain, while a Schottky contact makes up the gate. While it is common to fabricate such devices with silicon as the semiconductor, interest in diamond has increased due to its electronic properties which are appealing to high temperature, high power, or high frequency applications. However, adhesion to diamond as well as the material’s hardness poses fabrication challenges. Carbides lack the low temperature eutectic reactions found in silicides. This project aims to review existing literature for diamond contacts and correlate barrier height with eutectic temperature and enthalpy of formation for carbide forming diamond contacts. Similar relationships have been explored for the silicides in the past. The aim is to suggest the optimal materials for diamond contact fabrication. Of the carbide forming materials sets, it is suggested that Zr be used for Schottky contacts and Ti for Ohmic contacts, as these materials have greatest negative enthalpies of formation of the materials reviewed.
Zoom Room: https://asu.zoom.us/j/84584605299
Presentation Time: 12:00-1:00 PM (Arizona Time)
